EmbFlashSM
Combining TSMC's industry-leading logic process and licensed
split-gate flash cell structure, EmbFlash provides a logic-compatible
technology that features high performance logic function
and cost-effective flash memory. EmbFlash can increase device
functionality by integrating SRAM and analog functions on
the same chip.
EmbFlash is currently available in 0.5-micron, 0.35-micron, 0.25-Micron, 0.18-micron and 0.13-micron process of generations. New generation 0.13-Micron EmbFlashSM process sees another TSMC’s foundry first in terms of production launch and copper wiring adoption.
EmbFlash features small flash block sizes and low masking steps. The average yields of the matured products in 0.5-micron, 0.35-micron and 0.25-micron are over 90% in high volume production. Most popular flash blocks are provided, with density from as small as 32Kb to several Megabits, and data buses of 8 bits, 16 bits, and 32 bits. High performance and low power consumption are also implemented in the memory design. Designers can choose from an array of flexible sector sizes, with small sector size closed to EEPROM capability.
TSMC also provides a number of embedded non-volatile memory implementation
services.The service portfolio includes product design, chip
integration, mask making, manufacturing, and testing.During
product development, TSMC’s full array of design services integrates
flash with minimal time and effort.
FlashIPSM
TSMC FlashIP is a complete set of macros that can be designed
to specific densities and configurations.To satisfy a wider
range of application requirements, special features such as
high speed and low power have been added.In addition, a number
of FlashIP sets with small sector sizes can replace EEPROM
functions.Higher endurance SmartFlash IP and SmartEE IP are
tailored for smart card applications.SmartEE IP also supports
byte-erase operation for security critical applications.
Logic
NVM
Logic NVM uses a non-volatile memory grade logic process
that requires no extra masks to achieve memory non-volatility.It
is particularly competitive for low-density on-chip identification
and trimming/calibration, as well as medium-density on-chip
program code for micro controller applications.Third-party
developed non-volatile memory IP for 0.35-micron, 0.25-micron,
and 0.18-micron one-time programmable (OTP) and 0.25-micron,
0.18-micron, and 0.13-micron multiple times programmable
(MTP) have been qualified.
Electrical
Fuse
Why Electrical Fuse?
TSMC also developed electrical fuses for the 0.13-micron
process and beyond.Electrical fuses for 90nm and 65nm are
in production.
Technology
